From: Miquel Raynal <miquel.raynal@bootlin.com>
To: Ahmed Naseef <naseefkm@gmail.com>
Cc: Richard Weinberger <richard@nod.at>,
Vignesh Raghavendra <vigneshr@ti.com>,
linux-kernel@vger.kernel.org, linux-mtd@lists.infradead.org
Subject: Re: [PATCH v2] mtd: spinand: add support for Dosilicon DS35Q1GA/DS35M1GA
Date: Tue, 09 Dec 2025 09:56:14 +0100 [thread overview]
Message-ID: <87o6o8yqxd.fsf@bootlin.com> (raw)
In-Reply-To: <20251209071604.36482-1-naseefkm@gmail.com> (Ahmed Naseef's message of "Tue, 9 Dec 2025 11:16:02 +0400")
Hello Ahmed,
On 09/12/2025 at 11:16:02 +04, Ahmed Naseef <naseefkm@gmail.com> wrote:
> Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND.
>
> These are 1Gbit (128MB) devices with:
> - 2048 byte pages + 64 byte OOB
> - 64 pages per block, 1024 blocks
> - On-die 4-bit ECC per 512 byte sector
>
> The 64-byte OOB area is divided into 4 segments of 16 bytes, with each
> segment containing 8 bytes of user data (M2+M1) and 8 bytes of ECC
> parity (R1). This provides 30 bytes of usable OOB space after reserving
> 2 bytes for the bad block marker.
>
> Tested on Genexis Platinum 4410 (EcoNet EN751221) by writing known
> patterns to OOB and verifying ECC parity placement in R1 regions.
>
> Datasheet:
> https://www.dosilicon.com/resources/SPI%20NAND/DS35X1GAXXX_rev08.pdf
>
> Signed-off-by: Ahmed Naseef <naseefkm@gmail.com>
> ---
> Changes in v2:
> - Rebased on rc1 (updated SPINAND_OP_VARIANTS macros)
Thanks for this v2. It overall looks good to me but we are in the middle
of the merge window, so when I was saying "at -rc1" I meant "the next
one" which will be tagged next Sunday. It is probably fine as-is though,
so I'll try to apply the patch and will tell you if there are any
conflicts.
Thanks,
Miquèl
next prev parent reply other threads:[~2025-12-09 8:56 UTC|newest]
Thread overview: 3+ messages / expand[flat|nested] mbox.gz Atom feed top
2025-12-09 7:16 Ahmed Naseef
2025-12-09 8:56 ` Miquel Raynal [this message]
2026-01-19 10:12 ` Miquel Raynal
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